SPP07N60CFDHKSA1
Infineon Technologies
Deutsch
Artikelnummer: | SPP07N60CFDHKSA1 |
---|---|
Hersteller / Marke: | Cypress Semiconductor (Infineon Technologies) |
Teil der Beschreibung.: | MOSFET N-CH 650V 6.6A TO220-3 |
Datenblätte: |
|
RoHs Status: | Lead free / RoHs compliant |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
VGS (th) (Max) @ Id | 5V @ 300µA |
Vgs (Max) | ±20V |
Technologie | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse | PG-TO220-3-1 |
Serie | CoolMOS™ |
Rds On (Max) @ Id, Vgs | 700mOhm @ 4.6A, 10V |
Verlustleistung (max) | 83W (Tc) |
Verpackung / Gehäuse | TO-220-3 |
Paket | Tube |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Produkteigenschaften | Eigenschaften |
---|---|
Befestigungsart | Through Hole |
Eingabekapazität (Ciss) (Max) @ Vds | 790 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
Typ FET | N-Channel |
FET-Merkmal | - |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Drain-Source-Spannung (Vdss) | 650 V |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 6.6A (Tc) |
Grundproduktnummer | SPP07N |
SPP07N60CFDHKSA1 Einzelheiten PDF [English] | SPP07N60CFDHKSA1 PDF - EN.pdf |
MOSFET N-CH 650V 7.3A TO220-3
MOSFET N-CH 650V 7.3A TO220-3
SPP072N10N3G inf
LOW POWER_LEGACY
SPP07N60CFD INFINEO
SPP08N50C3HKSA1 INFINEON
MOSFET N-CH 650V 7.3A TO220-3
SPP07N65C3 INFINEO
VBSEMI TO-220
SPP07N80C2 Infineon
MOSFET N-CH 650V 7.3A TO220-3
N-CHANNEL POWER MOSFET
SPP08N50C3 Infineo
SPP07N60C2 Original
N-CHANNEL POWER MOSFET
INFINEON TO-220
LOW POWER_LEGACY
SPP07N60C3 I
SPP072N10N INFINEON
LOW POWER_LEGACY
2024/06/6
2024/04/18
2024/04/13
2023/12/20
![]() SPP07N60CFDHKSA1Infineon Technologies |
Anzahl*
|
Zielpreis (USD)
|